Comparative investigation of plating conditions on self-annealing of electrochemically deposited copper films

Author

Ritzdorf, T. ; Chen, L. ; Fulton, D. ; Dundas, C.

Author_Institution

Div. of Electrochem. Deposition, Semitool Inc., Kalispell, MT, USA

fYear

1999

fDate

1999

Firstpage

287

Lastpage

289

Abstract

This paper discusses the effects of chemistries and plating conditions on the self-annealing or recrystallization of electrochemically deposited copper films. Current density, plating temperature and the concentrations of the organic additives were found to strongly affect self-annealing of the copper films. The results show that copper films deposited at higher current densities, higher concentrations of organic additives or at lower plating temperatures take less time to complete self-annealing at room temperature

Keywords

annealing; copper; current density; electroplating; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; recrystallisation; surface chemistry; 20 C; Cu; copper films; current density; electrochemically deposited copper films; organic additive concentrations; plating chemistries; plating conditions; plating temperature; recrystallization; self-annealing; Additives; Annealing; Chemistry; Copper; Current density; Drives; Electrical resistance measurement; Manufacturing processes; Semiconductor films; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787146

Filename

787146