• DocumentCode
    3086115
  • Title

    Sub-micron silicon RF IC technologies: "an overview"

  • Author

    Lovelace, D.K. ; Finol, J.L. ; Durec, J.C.

  • Author_Institution
    Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
  • Volume
    3
  • fYear
    1998
  • fDate
    7-12 June 1998
  • Firstpage
    1859
  • Abstract
    Silicon based semiconductors have become the standard active device technology of choice in today´s cost and performance driven consumer wireless products. No longer is silicon technology confined to low frequency analog and digital processing functions. Silicon devices have now reached high frequency performance levels which allow them to be used almost exclusively in the RF section of many wireless communication circuits. This paper deals with the issues involved in employing silicon IC technologies to low cost, low power, RF circuits.
  • Keywords
    UHF integrated circuits; elemental semiconductors; integrated circuit technology; monolithic integrated circuits; reviews; silicon; Si; consumer wireless products; low power RF circuits; submicron Si RFIC technologies; wireless communication circuits; Costs; Cutoff frequency; Equations; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Silicon; Temperature; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1998 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-4471-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1998.700849
  • Filename
    700849