DocumentCode
3086115
Title
Sub-micron silicon RF IC technologies: "an overview"
Author
Lovelace, D.K. ; Finol, J.L. ; Durec, J.C.
Author_Institution
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Volume
3
fYear
1998
fDate
7-12 June 1998
Firstpage
1859
Abstract
Silicon based semiconductors have become the standard active device technology of choice in today´s cost and performance driven consumer wireless products. No longer is silicon technology confined to low frequency analog and digital processing functions. Silicon devices have now reached high frequency performance levels which allow them to be used almost exclusively in the RF section of many wireless communication circuits. This paper deals with the issues involved in employing silicon IC technologies to low cost, low power, RF circuits.
Keywords
UHF integrated circuits; elemental semiconductors; integrated circuit technology; monolithic integrated circuits; reviews; silicon; Si; consumer wireless products; low power RF circuits; submicron Si RFIC technologies; wireless communication circuits; Costs; Cutoff frequency; Equations; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Silicon; Temperature; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.700849
Filename
700849
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