InGaP/InGaAs dual-channel transistor

An interesting InGaP/InGaAs heterostructure field-effect transistor utilizing dual δ-doped quantum wells as double channels is studied and demonstrated. The employed dual δ-doped quantum wells and InGaP layer provide good carrier confinement and Schottky behavior, respectively. Good device performances including higher turn-on and breakdown voltages, high and linear transconductance and RF properties are obtained. For a 1 × 100 μm device, turn-on voltage of 1.74 V, maximum output current of 499 mA/mm, and maximum transconductance of 162 mS/mm with 303 mA/mm broad operation regime are obtained. The microwave properties of f_T and f_max are 16 and 32.3 GHz, respectively. Furthermore, even the device is operated at higher temperature regime (>400K), insignificant degradations of DC and RF performances are observed.