Title :
Extraction of parasitic parameters of dummy devices on different silicon substrates
Author :
Chen, L.P. ; Ho, Y.P. ; Lin, D.C. ; Tseng, B.M. ; Lee, H.Y. ; Guan, R.F. ; Huang, G.W. ; Chen, Y.C. ; Wen, W.Y. ; Chen, C.L.
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
S-parameters of dummy devices fabricated on Si substrates with different resistivities are measured and analyzed to study the effects of substrate resistivity on the microwave characteristics. An equivalent parasitic circuit model is proposed and the extraction procedure also developed. The substrate resistivity effects can be explained well by the proposed model.
Keywords :
MMIC; S-parameters; UHF integrated circuits; electrical resistivity; elemental semiconductors; equivalent circuits; integrated circuit modelling; silicon; substrates; S-parameters; Si; Si substrates; dummy devices; equivalent parasitic circuit model; microwave characteristics; parasitic parameters extraction; substrate resistivity; CMOS technology; Circuits; Conductivity; Electrical resistance measurement; Frequency; Parasitic capacitance; Scattering parameters; Silicon; Substrates; Tin;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700851
