• DocumentCode
    3086148
  • Title

    Extraction of parasitic parameters of dummy devices on different silicon substrates

  • Author

    Chen, L.P. ; Ho, Y.P. ; Lin, D.C. ; Tseng, B.M. ; Lee, H.Y. ; Guan, R.F. ; Huang, G.W. ; Chen, Y.C. ; Wen, W.Y. ; Chen, C.L.

  • Author_Institution
    Nat. Nano Device Labs., Hsinchu, Taiwan
  • Volume
    3
  • fYear
    1998
  • fDate
    7-12 June 1998
  • Firstpage
    1863
  • Abstract
    S-parameters of dummy devices fabricated on Si substrates with different resistivities are measured and analyzed to study the effects of substrate resistivity on the microwave characteristics. An equivalent parasitic circuit model is proposed and the extraction procedure also developed. The substrate resistivity effects can be explained well by the proposed model.
  • Keywords
    MMIC; S-parameters; UHF integrated circuits; electrical resistivity; elemental semiconductors; equivalent circuits; integrated circuit modelling; silicon; substrates; S-parameters; Si; Si substrates; dummy devices; equivalent parasitic circuit model; microwave characteristics; parasitic parameters extraction; substrate resistivity; CMOS technology; Circuits; Conductivity; Electrical resistance measurement; Frequency; Parasitic capacitance; Scattering parameters; Silicon; Substrates; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1998 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-4471-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1998.700851
  • Filename
    700851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3086148