A simple model for ultra-low specific contact resistivity metal- interfacial layer -semiconductor contacts

Author

Bencheng Huang ; Yingming Liu ; Xuezhen Jing ; Beichao Zhang ; Jingang Wu ; Liming Gao ; Chaoying Xie

Author_Institution

Sch. of Mater. Sci.&Eng., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

5

Abstract

A simple, physics-based model is developed for study of ultra-low specific contact resistivity metal-interfacial layer-semiconductor (M-I-S) contacts. Reduction in metal induced gap states (MIGS) density and Fermi level de-pinning in metal-semiconductor interface reduce the Schottky barrier height (SBH). Be coupled with electron transport model, the specific contact resistivity in different M-I-S system can be calculated.

Keywords

MIS structures; Schottky barriers; contact resistance; electrical resistivity; Fermi level depinning; SBH; Schottky barrier height; electron transport model; metal induced gap states; metal-interfacial layer-semiconductor contacts; metal-semiconductor interface; physics-based model; specific contact resistivity; ultralow specific contact resistivity; II-VI semiconductor materials; Indium tin oxide; Insulators; Performance evaluation; Silicon; Zinc oxide; Fermi level de-pinning; M-I-S contacts; Schottky barrier height; metal induced gap states; specific contact resistivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153393

Filename

7153393