Title :
Electrical stability and microstructural evolution in thin films of high conductivity copper alloys
Author :
de Felipe, Tarek Suwwan ; Murarka, S.P. ; Ajayan, P.M. ; Bonevich, J.
Author_Institution :
SRC Center for Adv. Interconnect Sci. & Technol., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Alloys of copper with ~2 at.% Mg or 0.5 at.% Al (with an electrical resistivity of ~2 μΩ-cm) have been investigated for interconnect applications. The electrical properties of MOS capacitors using these alloys as metals and microstructure evaluation using high resolution planar and cross-sectional imaging techniques were used to examine the stability of such structures. Results supported by Rutherford backscattering, X-ray diffraction, sheet-resistance, and SIMS measurements are discussed, and support and elucidate the behavior and excellent stability of Cu-Mg capacitors
Keywords :
MOS capacitors; Rutherford backscattering; X-ray diffraction; aluminium alloys; circuit stability; copper alloys; crystal microstructure; electrical resistivity; image resolution; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; magnesium alloys; secondary ion mass spectra; 2 muohmcm; Cu-Al alloys; Cu-Mg alloys; Cu-Mg capacitors; CuAl-SiO2-Si; CuMg-SiO2-Si; MOS capacitors; Rutherford backscattering; SIMS measurements; X-ray diffraction; copper alloys; cross-sectional imaging techniques; electrical properties; electrical resistivity; electrical stability; high conductivity copper alloy thin films; high resolution planar imaging techniques; interconnect applications; microstructural evolution; microstructure evaluation; sheet-resistance; structure stability; Aluminum alloys; Copper alloys; Electric resistance; High-resolution imaging; Image resolution; MOS capacitors; Microstructure; Optical imaging; Stability; Transistors;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787148
