Title :
Anti-weak localization of the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN single quantum well
Author :
Lu, J. ; Shen, B. ; Tang, N. ; Chen, D.J. ; Zhang, R. ; Shi, Y. ; Zheng, Y.D.
Author_Institution :
Jiangsu Provincial Key Lab. of Photonic & Electron. Mater. Sci. & Technol., Nanjing Univ., China
Abstract :
The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time τe, dephasing time τφ and spin-orbit(s-o) scattering time τso at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; magnetoresistance; semiconductor quantum wells; spin-orbit interactions; two-dimensional electron gas; weak localisation; wide band gap semiconductors; Al0.22Ga0.78N-GaN; anti-weak localization; dephasing time; elastic scattering time; magnetoresistance; modulation-doped AlxGa1-xN/GaN single quantum well; spin-orbit scattering time; triangular quantum well; two dimensional electron gas; Conductivity; Electromagnetic scattering; Electrons; Epitaxial layers; Gallium nitride; Magnetic field measurement; Magnetic fields; Magnetoresistance; Particle scattering; Temperature;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306794
