DocumentCode :
3086276
Title :
Low Cu electrolyte for advanced damascene plating
Author :
Jian Zhou ; Opocensky, Edward C. ; Reid, Jonathan
Author_Institution :
Lam Res. Corp., Tualatin, OR, USA
fYear :
2015
fDate :
15-16 March 2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper illustrates the technical advantages and extendibility of low Cu electrolyte for future generation damascene filling. Such improvement stems from many benefits low Cu concentration can provide: (1) stronger polarization, (2) stronger and more uniform adsorption of suppressors, (3) higher solubility of suppressor molecules for better wetting and defect performance, and (4) higher nucleation density.
Keywords :
copper; electrolytes; electroplating; polarisation; Cu; advanced damascene plating; copper concentration; copper electrolyte; damascene filling; nucleation density; polarization; suppressor adsorption; suppressor molecule; Additives; Adsorption; Copper; Electrodes; Integrated circuits; Lead; Mercury (metals);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
ISSN :
2158-2297
Type :
conf
DOI :
10.1109/CSTIC.2015.7153398
Filename :
7153398
Link To Document :
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