DocumentCode
3086276
Title
Low Cu electrolyte for advanced damascene plating
Author
Jian Zhou ; Opocensky, Edward C. ; Reid, Jonathan
Author_Institution
Lam Res. Corp., Tualatin, OR, USA
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
4
Abstract
This paper illustrates the technical advantages and extendibility of low Cu electrolyte for future generation damascene filling. Such improvement stems from many benefits low Cu concentration can provide: (1) stronger polarization, (2) stronger and more uniform adsorption of suppressors, (3) higher solubility of suppressor molecules for better wetting and defect performance, and (4) higher nucleation density.
Keywords
copper; electrolytes; electroplating; polarisation; Cu; advanced damascene plating; copper concentration; copper electrolyte; damascene filling; nucleation density; polarization; suppressor adsorption; suppressor molecule; Additives; Adsorption; Copper; Electrodes; Integrated circuits; Lead; Mercury (metals);
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153398
Filename
7153398
Link To Document