Title :
Synthesis of monolayer MoS2 with seed promoters by chemical vapor deposition at low temperature
Author :
Gu Pinchao ; Zhang Kailiang ; Feng Yulin ; Wang Fang ; Miao Yinping ; Han Yemei ; Cao Rongrong ; Zhang Hanxia
Author_Institution :
Tianjin Key Lab. of Film Electron. & Commun. Devices, Tianjin Univ. of Technol., Tianjin, China
Abstract :
In this paper, large area monolayer MoS2 was prepared with chemical vapor deposition (CVD) utilizing seed promoters, perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA). The process conditions including seed promoter concentration, temperature and the flow rate of carrier gas were optimized, and the obtained MoS2 is characterized by AFM and optical microscopy. The AFM results show that the thickness of MoS2 is about 0.7nm, which indicates that the MoS2 is monolayer. It is found that large area of monolayer MoS2 may be got at relatively low temperature 650°C with low concentration of PTCDA.
Keywords :
atomic force microscopy; chemical vapour deposition; molybdenum compounds; monolayers; optical microscopy; organic compounds; AFM; CVD; MoS2; PTCDA; atomic force microscopy; carrier gas; chemical vapor deposition; low temperature; monolayer molybdenum disulfide synthesis; optical microscopy; perylene-3, 4, 9, lO-tetracarboxylic dianhydride; seed promoter concentration; temperature 650 C; Atom optics; Chemicals; Optical imaging; Silicon;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153399
