Title :
Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)
Author :
Chen, Chun-Yuan ; Uang, Chii-Maw ; Cheng, Shiou-Ying ; Chuang, Hung-Ming ; Fu, Ssu-I ; Tsai, Ching-Hsiu ; Chang, Chi-Yuan ; Wen-Chau Liu
Author_Institution :
Dept. of Electr. Eng., Cheng Kung Univ., Tainan, Taiwan
Abstract :
The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9 × 10-12A (1.56 × 10-7 A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface recombination; 2 V; 40 mV; 5 V; DC performances; InP/InGaAs tunneling emitter bipolar transistor; common-base breakdown voltages; common-emitter breakdown voltages; extremely wide collector current regime; ultra-low collector current; Bipolar transistors; Charge carrier processes; Electron emission; Electron mobility; FETs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; PHEMTs; Tunneling;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306799
