A monolithic current limiting power MOSFET

Author

Yun, Chong-Man ; Kim, Doo-Young ; Choi, Yeam-lk ; Han, Min-Koo

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1995

fDate

21-24 Feb 1995

Firstpage

71

Abstract

A new monolithic current limiting power MOSFET is proposed. The MOSFET consists of a main power cell, a sensing cell and a lateral npn bipolar transistor. The proposed MOSFET may be fabricated by a conventional DMOS process without an additional mask step. Overcurrent state is sensed by the pinched resistor of the npn transistor so that any additional sensing resistor is not required. Sensing voltage at the pinched base resistor is 0.7 V. The limiting current level is adjusted easily by an external resistor. Simulation results show that the on-resistance of the power MOSFET is not deteriorated by the sensing and protection circuit. Overcurrent protection is achieved successfully with the protection area less than 0.2% of the whole die area

Keywords

electric current measurement; electric sensing devices; monolithic integrated circuits; overcurrent protection; power MOSFET; power bipolar transistors; power integrated circuits; resistors; semiconductor device models; external resistor; fabrication; lateral npn bipolar transistor; monolithic current limiting power MOSFET; on-resistance; overcurrent protection; overcurrent state; pinched resistor; power cell; sensing cell; simulation; Bipolar transistors; Current limiters; Equivalent circuits; MOSFET circuits; Power MOSFET; Power engineering and energy; Power system protection; Resistors; Switched-mode power supply; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on

Print_ISBN

0-7803-2423-4

Type

conf

DOI

10.1109/PEDS.1995.404945

Filename

404945