Title :
High field transport characterization in nano MOSFETs using 10GHz capacitance measurements
Author :
Diouf, C. ; Cros, A. ; Gloria, Daniel ; Rosa, J. ; Buczko, Marcin ; Ghibaudo, Gerard
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
10 GHz capacitance measurements are performed for the first time to reliably measure the inversion charge in downscaled devices. Effective mobility and average velocity are calculated. Obtained backscattering coefficients in both linear and saturation regimes clearly evidence the onset of non-stationnary transport but still far from the ballistic limit operation.
Keywords :
MOSFET; capacitance measurement; high field effects; semiconductor device reliability; average velocity; backscattering coefficients; capacitance measurements; downscaled devices; effective mobility; frequency 10 GHz; high field transport characterization; inversion charge; nano MOSFET; Backscatter; Capacitance measurement; Logic gates; MOSFET; Parasitic capacitance; Q measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724583
