DocumentCode
3086413
Title
Electroplating (ECP) entry related defect improvement study
Author
Xuezhen Jing ; Jingjing Tan ; Zhijun Zhu
Author_Institution
Semicond. Manuf. Int. Corp., Shanghai, China
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
3
Abstract
With the logic device size shrinking to 28nm and beyond, ultra- low k has been introduced to Cu interconnect, which makes ECP Cu gap-fill very challenging. This paper studied ECP entry related defect with special map. Entry related parameter: entry wave form, entry dynamic mode, and additive concentration have been studied to improve this special pattern defect. Suppressor concentration and dynamic mode have obvious impact on this special pattern. A bubble related model has been proposed to explain defect formation mechanism.
Keywords
additives; copper; crystal defects; electroplating; integrated circuit interconnections; logic devices; Cu; ECP entry related defect; additive concentration; bubble related model; copper interconnect; defect formation mechanism; electroplating; entry dynamic mode; entry wave form; gap-fill; logic device size shrinking; size 28 nm; special pattern defect; suppressor concentration; ultralow k; ECP entry; defect; line end void;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153404
Filename
7153404
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