Title :
Electroplating (ECP) entry related defect improvement study
Author :
Xuezhen Jing ; Jingjing Tan ; Zhijun Zhu
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
With the logic device size shrinking to 28nm and beyond, ultra- low k has been introduced to Cu interconnect, which makes ECP Cu gap-fill very challenging. This paper studied ECP entry related defect with special map. Entry related parameter: entry wave form, entry dynamic mode, and additive concentration have been studied to improve this special pattern defect. Suppressor concentration and dynamic mode have obvious impact on this special pattern. A bubble related model has been proposed to explain defect formation mechanism.
Keywords :
additives; copper; crystal defects; electroplating; integrated circuit interconnections; logic devices; Cu; ECP entry related defect; additive concentration; bubble related model; copper interconnect; defect formation mechanism; electroplating; entry dynamic mode; entry wave form; gap-fill; logic device size shrinking; size 28 nm; special pattern defect; suppressor concentration; ultralow k; ECP entry; defect; line end void;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153404
