• DocumentCode
    3086468
  • Title

    Effects of ion-implantation on light-emitting FeSi2 shallow junction

  • Author

    Chou, L.J. ; Lu, H.T. ; Chen, L.J. ; Huang, J.S.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2004
  • fDate
    15-16 March 2004
  • Firstpage
    240
  • Lastpage
    244
  • Abstract
    Effects of ion-implantation and substrate orientation on nanostructures and photoluminescence (PL) of the ultra-thin β-FeSi2 films were investigated. Ion-implantation was found to enhance the formation of β-FeSi2. PL characteristics were strongly affected by implantation species and substrate orientation. The strongest intensity of PL was observed in epitaxial β-FeSi2 ultra-thin films on BF2+-implanted (111)Si.
  • Keywords
    annealing; ion implantation; iron compounds; photoluminescence; semiconductor epitaxial layers; semiconductor junctions; semiconductor quantum dots; transmission electron microscopy; FeSi2; TEM; annealing; beta-phase formation; energy shift; epitaxial films; implantation species; integrated optoelectronic devices; ion-implantation; light-emitting shallow junction; nanostructures; photoexcitation; photoluminescence; quantum confinement; quantum dots; substrate orientation; ultrathin films; Annealing; Diffraction; Iron; Nanoscale devices; Nanostructures; Optical materials; Quantum dots; Semiconductor films; Semiconductor materials; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
  • Print_ISBN
    0-7803-8191-2
  • Type

    conf

  • DOI
    10.1109/IWJT.2004.1306844
  • Filename
    1306844
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3086468