Title :
The influence of strained SiGe thin layer and correlative structure parameters on sub-threshold characteristics of SiGe PMOSFETs
Author :
Yang, R. ; Luo, J.S. ; Tu, J. ; Zhang, R.Z.
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
Sub-threshold characteristics of strained SiGe PMOSFETs and Si PMOSFETs are theoretically analyzed with simplified but effective models, then are simulated and compared by using a two-dimensional simulator. Sub-threshold current and sub-threshold slope varying with vertical structure parameters are also studied. Simulation results are well consistent with the theoretical analysis, and show that the sub-threshold characteristics of strained SiGe PMOSFETs, which are worse than those of Si PMOSFETs, are sensitive to vertical structure parameters and worth carefully paying attention to.
Keywords :
Ge-Si alloys; MOSFET; semiconductor device models; SiGe; correlative structure parameters; effective models; energy band diagram; off-state current; strained PMOSFET; strained thin layer influence; subthreshold characteristics; subthreshold slope; two-dimensional simulator; vertical structure parameters; Analytical models; Germanium silicon alloys; MOSFET circuits; Medical simulation; Microelectronics; Physics; Power dissipation; Predictive models; Silicon germanium; Substrates;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306845
