Title :
Research for SiGe HBT
Author :
Liu, Rongkan ; Liu, Daoguang ; Koenig, Ulf ; Gruhle, Adreas ; Zhang, Jing ; Li, Kaicheng ; Liu, Luncai ; Kibbel, Horst ; Zeiler, Ulrich ; Liu, Yukui ; Xu, Shiliu ; Hu, Gangyi
Author_Institution :
Nat. Labs of Analog IC, Chongqing, China
Abstract :
In this paper, a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP8510C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for radio frequency performances. The measurements showed the satisfactory results. The SiGe HBT cutoff frequency fT is 108GHz, and the maximum oscillation frequency fMax is 157GHz.
Keywords :
Ge-Si alloys; S-parameters; etching; heterojunction bipolar transistors; millimetre wave bipolar transistors; photoresists; 108 GHz; 157 GHz; Gummel plots; HBT process technology; S parameter; SiGe; air-bridge technology; base-emitter self-alignment technology; cutoff frequency; etching; high current gain; maximum oscillation frequency; mesa structure; metal masking; positive photoresist; radio frequency performances; Cutoff frequency; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; RF signals; Radio frequency; Scattering parameters; Signal analysis; Silicon germanium;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306846
