DocumentCode
3086551
Title
Fractal capacitors
Author
Samavati, H. ; Hajimiri, A. ; Shahani, A. ; Nasserbakht, G. ; Lee, T.
Author_Institution
Stanford Univ., CA, USA
fYear
1998
fDate
5-7 Feb. 1998
Firstpage
256
Lastpage
257
Abstract
This paper introduces a high-density linear capacitor structure with low bottom-plate parasitics. The density of such a structure improves as process technologies scale. Fractal capacitors retain the linearity of metal-to-metal capacitors with limited degradation of Q. The structures automatically limit the length of the thin metal sections to a few microns, keeping the series resistance reasonably small. Another advantage is the reduction of bottom-plate capacitance because of the smaller area.
Keywords
fractals; bottom-plate capacitance; bottom-plate parasitics; fractal capacitors; high-density linear capacitor structure; process technologies; series resistance; Capacitance; Capacitors; Conductors; Degradation; Electrical resistance measurement; Fractals; Frequency measurement; Joining processes; Libraries; Lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-4344-1
Type
conf
DOI
10.1109/ISSCC.1998.672459
Filename
672459
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