• DocumentCode
    3086551
  • Title

    Fractal capacitors

  • Author

    Samavati, H. ; Hajimiri, A. ; Shahani, A. ; Nasserbakht, G. ; Lee, T.

  • Author_Institution
    Stanford Univ., CA, USA
  • fYear
    1998
  • fDate
    5-7 Feb. 1998
  • Firstpage
    256
  • Lastpage
    257
  • Abstract
    This paper introduces a high-density linear capacitor structure with low bottom-plate parasitics. The density of such a structure improves as process technologies scale. Fractal capacitors retain the linearity of metal-to-metal capacitors with limited degradation of Q. The structures automatically limit the length of the thin metal sections to a few microns, keeping the series resistance reasonably small. Another advantage is the reduction of bottom-plate capacitance because of the smaller area.
  • Keywords
    fractals; bottom-plate capacitance; bottom-plate parasitics; fractal capacitors; high-density linear capacitor structure; process technologies; series resistance; Capacitance; Capacitors; Conductors; Degradation; Electrical resistance measurement; Fractals; Frequency measurement; Joining processes; Libraries; Lithography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-4344-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.1998.672459
  • Filename
    672459