Title :
A 1 W Si-LDMOS power amplifier with 40 % drain efficiency for 6 GHz WLAN applications
Author :
Gruner, D. ; Sorge, R. ; Bengtsson, O. ; Markos, A.Z. ; Boeck, G.
Author_Institution :
Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
Abstract :
The design and characterization of LDMOS power transistors and amplifiers developed for 6 GHz WLAN applications are presented. Transistors of different size were fabricated in a 0.25 μm SiGe:C BiCMOS technology and have been characterized using a load/source pull measurement system. Based on this characterization a 5.8-5.9 GHz power amplifier was designed, fabricated and tested. By using on-board Wilkinson combiner structures an output power of 1 W at 1 dB power compression was achieved. The measured maximum drain efficiency/PAE were 40/28 % with a small signal gain of 7.2 dB. From the modulated signal evaluation using a 802.11p test signal an ACPR of -38 dBc and an error vector magnitude of 3 % were determined at 1 dB peak power compression.
Keywords :
BiCMOS analogue integrated circuits; microwave integrated circuits; power amplifiers; power combiners; wireless LAN; 802.11 p; BiCMOS technology; LDMOS power amplifier; SiGe:C; WLAN applications; frequency 5.8 GHz to 5.9 GHz; frequency 6 GHz; gain 7.2 dB; onboard Wilkinson combiner structure; power 1 W; size 0.25 mum; BiCMOS integrated circuits; CMOS technology; High power amplifiers; Microelectronics; Microwave amplifiers; Microwave technology; Microwave transistors; Power amplifiers; Power generation; Wireless LAN;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5514799
