Structural characterization of SiGe/Si dry thermal oxidation

Author

Chen, Z.J. ; Zhang, E. ; Wang, X. ; Zou, S.C.

Author_Institution

Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China

fYear

2004

fDate

15-16 March 2004

Firstpage

267

Lastpage

269

Abstract

In this paper, a study on the dry thermal oxidation of a graded SiGe layer is proposed. By oxidation of a graded SiGe layer, the effect of Ge pileup was reduced and dependence of the oxidation ambient was analyzed. During oxidation at pure oxide ambient, pure compositions of silicon dioxide are formed without dislocation, and it was clearly proved by the TEM, EDS, SE, and AFM results. Whereas, after oxidation under atmospheric pressure with 21/min mix gas flow of Ar50%+O₂50%, composition of SiGeO₂ was found at the top layer. This result can propose an oxidation method optimization of SiGe/Si heterostructures.

Keywords

Ge-Si alloys; X-ray chemical analysis; atomic force microscopy; dislocation structure; ellipsometry; interface roughness; oxidation; silicon; stoichiometry; surface morphology; surface roughness; transmission electron microscopy; AFM; EDS; SiGe-Si; SiGeO₂; TEM; compositional depth profile; dry thermal oxidation; graded layer; heterostructures optimization; misfit dislocations; morphology; oxidation ambient dependence; oxidation temperature; reduced germanium pileup; spectroscopic ellipsometry; step-graded buffer; stoichiometry; structural characterization; surface roughness; thickness control; threading dislocations; virtual substrates; Atomic force microscopy; Chemical analysis; Germanium silicon alloys; Oxidation; Performance analysis; Silicon germanium; Spectroscopy; Substrates; Surface morphology; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306852

Filename

1306852