Title :
Structural characterization of SiGe/Si dry thermal oxidation
Author :
Chen, Z.J. ; Zhang, E. ; Wang, X. ; Zou, S.C.
Author_Institution :
Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
In this paper, a study on the dry thermal oxidation of a graded SiGe layer is proposed. By oxidation of a graded SiGe layer, the effect of Ge pileup was reduced and dependence of the oxidation ambient was analyzed. During oxidation at pure oxide ambient, pure compositions of silicon dioxide are formed without dislocation, and it was clearly proved by the TEM, EDS, SE, and AFM results. Whereas, after oxidation under atmospheric pressure with 21/min mix gas flow of Ar50%+O250%, composition of SiGeO2 was found at the top layer. This result can propose an oxidation method optimization of SiGe/Si heterostructures.
Keywords :
Ge-Si alloys; X-ray chemical analysis; atomic force microscopy; dislocation structure; ellipsometry; interface roughness; oxidation; silicon; stoichiometry; surface morphology; surface roughness; transmission electron microscopy; AFM; EDS; SiGe-Si; SiGeO2; TEM; compositional depth profile; dry thermal oxidation; graded layer; heterostructures optimization; misfit dislocations; morphology; oxidation ambient dependence; oxidation temperature; reduced germanium pileup; spectroscopic ellipsometry; step-graded buffer; stoichiometry; structural characterization; surface roughness; thickness control; threading dislocations; virtual substrates; Atomic force microscopy; Chemical analysis; Germanium silicon alloys; Oxidation; Performance analysis; Silicon germanium; Spectroscopy; Substrates; Surface morphology; Transmission electron microscopy;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306852
