Title :
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
Author :
Liu, Quanwei ; Vinet, M. ; Gimbert, J. ; Loubet, N. ; Wacquez, R. ; Grenouillet, L. ; Le Tiec, Y. ; Khakifirooz, A. ; Nagumo, Toshiharu ; Cheng, K. ; Kothari, H. ; Chanemougame, D. ; Chafik, F. ; Guillaumet, S. ; Kuss, James ; Allibert, F. ; Tsutsui, G. ;
Author_Institution :
STMicroelectron., Albany NanoTech, Albany, NY, USA
Abstract :
We report, for the first time, high performance Ultra-thin Body and Box (UTBB) FDSOI devices with a gate length (LG) of 20nm and BOX thickness (TBOX) of 25nm, featuring dual channel FETs (Si channel NFET and compressively strained SiGe channel PFET). Competitive effective current (Ieff) reaches 630μA/μm and 670μA/μm for NFET and PFET, respectively, at off current (Ioff) of 100nA/μm and Vdd of 0.9V. Excellent electrostatics is obtained, demonstrating the scalability of these devices to14nm and beyond. Very low AVt (1.3mV·μm) of channel SiGe (cSiGe) PFET devices is reported for the first time. BTI was improved >20% vs a comparable bulk device and evidence of continued scalability beyond 14nm is provided.
Keywords :
Ge-Si alloys; electrostatics; field effect transistors; silicon-on-insulator; BOX thickness; Si; Si channel NFET; SiGe; UTBB FDSOI devices; dual channel FET; electrostatics; gate length; size 20 nm; size 25 nm; strained SiGe channel PFET; ultra-thin body and box devices; Annealing; Epitaxial growth; Logic gates; Performance evaluation; Silicon; Silicon germanium; Strain;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724592
