High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Author

Liu, Quanwei ; Vinet, M. ; Gimbert, J. ; Loubet, N. ; Wacquez, R. ; Grenouillet, L. ; Le Tiec, Y. ; Khakifirooz, A. ; Nagumo, Toshiharu ; Cheng, K. ; Kothari, H. ; Chanemougame, D. ; Chafik, F. ; Guillaumet, S. ; Kuss, James ; Allibert, F. ; Tsutsui, G. ;

Author_Institution

STMicroelectron., Albany NanoTech, Albany, NY, USA

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We report, for the first time, high performance Ultra-thin Body and Box (UTBB) FDSOI devices with a gate length (L_G) of 20nm and BOX thickness (T_BOX) of 25nm, featuring dual channel FETs (Si channel NFET and compressively strained SiGe channel PFET). Competitive effective current (I_eff) reaches 630μA/μm and 670μA/μm for NFET and PFET, respectively, at off current (I_off) of 100nA/μm and V_dd of 0.9V. Excellent electrostatics is obtained, demonstrating the scalability of these devices to14nm and beyond. Very low A_Vt (1.3mV·μm) of channel SiGe (cSiGe) PFET devices is reported for the first time. BTI was improved >20% vs a comparable bulk device and evidence of continued scalability beyond 14nm is provided.

Keywords

Ge-Si alloys; electrostatics; field effect transistors; silicon-on-insulator; BOX thickness; Si; Si channel NFET; SiGe; UTBB FDSOI devices; dual channel FET; electrostatics; gate length; size 20 nm; size 25 nm; strained SiGe channel PFET; ultra-thin body and box devices; Annealing; Epitaxial growth; Logic gates; Performance evaluation; Silicon; Silicon germanium; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724592

Filename

6724592