Numerical simulation of hot-carrier degradation in SOI MOSFETs

Author

Lin, Qing ; Zhu, Ming ; Wu, Yan-jun ; Xie, Xin-yun ; Zhang, Zheng-Xuan ; Lin, Cheng-Lu

Author_Institution

Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China

fYear

2004

fDate

15-16 March 2004

Firstpage

277

Lastpage

280

Abstract

We present a simulation-based approach for characterizing hot-carrier degradation in SOI MOSFETs, which includes models for hot-carrier injection, carrier transport, and carrier trapping in the gate oxide. This approach clearly illustrates the physical mechanisms responsible for hot-carrier degradation in SOI MOSFETs. To suppress the hot-carrier effect, we have also proposed the SOI LDDMOSFET structure and the simulation results have been compared with each other.

Keywords

MOSFET; hot carriers; impact ionisation; leakage currents; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; silicon-on-insulator; LDDMOSFET structure; MEDICI; SOI MOSFET; Si; VLSI circuits; carrier transport; carrier trapping; gate leakage current; gate oxide; hot-carrier degradation; hot-carrier injection; impact ionization; numerical simulation; physical mechanisms; reliability; Degradation; Hot carrier effects; Hot carrier injection; Hot carriers; MOSFETs; Modems; Numerical simulation; Predictive models; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306855

Filename

1306855