• DocumentCode
    3086665
  • Title

    2nd Generation dual-channel optimization with cSiGe for 22nm HP technology and beyond

  • Author

    Ortolland, C. ; Jaeger, David ; McArdle, T.J. ; DeWan, Charlotte ; Robison, R.R. ; Zhao, Kai ; Cai, Jinxin ; Chang, Peter ; Liu, Yanbing ; Varadarajan, V. ; Wang, Guibin ; Chou, A.I. ; Ioannou, Dimitris P. ; Oldiges, P. ; Agnello, P. ; Narasimha, S. ; Nar

  • Author_Institution
    IBM SRDC, Hopewell Junction, NY, USA
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    In this paper we report on a comprehensive study of Silicon-Germanium channel (cSiGe) physics, layout effects and impact on device performance. This work demonstrates a 2nd generation of dual channel technology, which meets the 22nm high performance technology (HP) requirement. Modeling and simulation are used to optimize the process to obtain a 10% Short Channel Effect (SCE) improvement and an overall 20% performance enhancement. This 2nd generation high performance dual channel process has been integrated into a manufacturable and yieldable technology, thereby providing a solid platform for introduction of SiGe FinFet technology.
  • Keywords
    Ge-Si alloys; MOSFET; semiconductor device models; semiconductor materials; FinFet technology; HP technology; SCE; SiGe; crystalline silicon-germanium channel physics; high performance technology; second generation dual-channel optimization; short channel effect; size 22 nm; Junctions; Logic gates; Optimization; Performance evaluation; Random access memory; Silicon germanium; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724594
  • Filename
    6724594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3086665