Title :
Growth of graded SiGe films by novel UHV/CVD system
Author :
Huang, Wentao ; Chen, Changchun ; Xiong, Xiaoyi ; Liu, Zhihong ; Zhang, Wei ; Tsien, Pei-Hsin
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Graded Ge fraction SiGe film was grown by using newly-designed SGE500 SiGe UHV/CVD system. The film quality was determined by X-ray diffraction. SiGe hetero-junction bipolar transistor (HBT) device with this SiGe film was made. Results showed that the quality of the graded SiGe film was high and the SiGe HBT device had good electrical performance.
Keywords :
Ge-Si alloys; X-ray diffraction; chemical vapour deposition; heterojunction bipolar transistors; rapid thermal processing; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; SiGe; X-ray diffraction; electrical performance; epitaxial wafer; film quality; graded fraction film growth; heterojunction bipolar transistor; infrared rapid-thermal process; output characteristic; single-wafer; ultrahigh vacuum CVD system; Chemical vapor deposition; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Molecular beam epitaxial growth; Photonic band gap; Silicon germanium; Temperature; X-ray diffraction;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306856
