Title :
The thermal stability of zirconium aluminate high-k film on strained SiGe layer
Author :
Di, Zengfeng ; Zhang, Miao ; Liu, Weili ; Luo, Suhua ; An, Zhenghua ; Zhang, Zhengxuan ; Song, Zhitang ; Lin, Chenglu
Author_Institution :
Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
Zr0.6Al0.4O1.8 dielectric films were deposited directly on strained SiGe substrate at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N2 under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr0.6Al0.4O1.8 film is about 900°C, 400°C higher than that of pure ZrO2. The amorphous Zr0.6Al0.4O1.8 film with a physical thickness of ∼ 12 nm and an amorphous interfacial layer (IL) with a physical thickness of ∼3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800°C in the Zr0.6Al0.4O1.8 film. X-ray photoelectron spectroscopy (XPS) reveals that zirconium and aluminum are both in the fully oxidation states.
Keywords :
MOSFET; X-ray diffraction; X-ray photoelectron spectra; annealing; binding energy; dielectric thin films; electron beam deposition; noncrystalline structure; oxidation; permittivity; phase separation; thermal stability; transmission electron microscopy; vacuum deposited coatings; zirconium compounds; X-ray diffraction; XPS; Zr0.6Al0.4O1.8; amorphous film; amorphous interfacial layer; amorphous phase separation; chemical binding states; fully oxidation states; furnace annealing; gate leakage; high-k dielectric films; high-resolution transmission electron microscopy; microstructure properties; onset crystallization temperature; strained layer substrate; thermal stability; ultrahigh vacuum electron-beam evaporation; Amorphous materials; Annealing; Dielectric films; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Silicon germanium; Temperature; Thermal stability; Zirconium;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306857
