Title :
Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications
Author :
Uang, Chii-Maw ; Chuang, Hung-Ming ; Shen -Fu, T. ; Thei, Kong-Beng ; Lai, Po-Hsien ; Fu, Ssu-I ; Tsai, Shen Fu ; Wen-Chau Liu
Author_Institution :
Dept. of Electr. Eng., I Shou Univ., Kaohsiung, Taiwan
Abstract :
The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18 μm CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (Rbulk) and interface resistance (Rinterface) are obtained at different temperature. For diffused resistors, the Rbulk and Rinterface, values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of RNA are found in n+ and p+ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.
Keywords :
CMOS integrated circuits; ULSI; chemical interdiffusion; chemical mechanical polishing; contact resistance; elemental semiconductors; etching; isolation technology; planarisation; rapid thermal annealing; resistors; silicon; CMOS technology; Si; ULSI; bulk sheet resistance; chemical mechanical polish; cobalt salicide process; diffused resistors; interface resistance; metallization process; planar process; polysilicon resistors; positive temperature coefficient of resistance; rapid thermal annealing; resistor size; resistor-protect-oxide layer; shallow trench isolation; temperature-dependent characteristics; via-hole etching; CMOS process; CMOS technology; Circuits; Implants; Microelectronics; Resistors; Silicides; Silicon; Temperature; Ultra large scale integration;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306860
