Title :
IGBT characterisation for their protection by fuses
Author :
De Palma, Jean-Frmcois ; Mulertt, Charles ; Duong, Son ; Schaeffer, Christian
Author_Institution :
Soc. FERRAZ, Saint Bonnet de Mure, France
Abstract :
The case of a power IGBT can be severely damaged by high fault currents. Fast fuses can eliminate this problem. Studies and tests show that a specially designed fuse can prevent an IGBT from exploding and keep the circuit inductance below acceptable values. A thermal model is proposed in order to see how an IGBT behaves thermally during short circuits and thus to select the appropriate fuse
Keywords :
electric fuses; insulated gate bipolar transistors; overcurrent protection; power bipolar transistors; protection; semiconductor device models; semiconductor device testing; short-circuit currents; thermal analysis; characterisation; circuit inductance; fault currents; fuses; power IGBT; protection; short circuits; tests; thermal model; Circuits; Explosions; Fault currents; Fuses; Inductance; Insulated gate bipolar transistors; Protection; Testing; Thermal stresses; Voltage;
Conference_Titel :
Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on
Print_ISBN :
0-7803-2423-4
DOI :
10.1109/PEDS.1995.404947
