Title :
A new simulation method of ion implantation
Author :
Shi, Xiaokang ; Min Yul ; Huihui Jil ; Huang, Ru ; Zhang, Xing ; Zhang, Jinyu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Efficient simulations of ion implantation are very important to ultra shallow junction technology. In this paper, a new splitting method is developed, based on the quantitative description and sensitivity analysis of statistical noise. A series of formulas are deduced and some disadvantages of existing splitting methods are pointed out.
Keywords :
Gaussian distribution; Monte Carlo methods; doping profiles; energy loss of particles; ion implantation; random noise; semiconductor junctions; semiconductor process modelling; sensitivity analysis; Gauss distribution; combining method; deductive formulas; dopant profile; efficient simulations; final stopping position; ion implantation; muzzle condition; normalized dispersion; quantitative description; sensitivity analysis; splitting method; statistical noise; ultrashallow junction technology; Analytical models; Chaos; Costs; Crystalline materials; Impurities; Ion implantation; Microelectronics; Noise reduction; Research and development; Sensitivity analysis;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306864
