A precise and efficient analytical method of realistic dopant fluctuations in shallow junction formation

Author

Shi, Xiaokang ; Yu, Min ; Yin, Jun ; Zhang, Guoyan ; Huang, Ru ; Zhang, Xing

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2004

fDate

15-16 March 2004

Firstpage

309

Lastpage

312

Abstract

The paper addresses a precise and efficient analytical method of realistic dopant fluctuations in shallow junction formation. To reach the analytical method, millions of simulations are finished, and data of simulation results are analyzed. The analytical function of the method is without any additional fitting parameters and can be used to calculate the standard deviation and normalized standard deviation at different depths of the shallow junctions. And some simulation results of characteristics variation of devices are also shown in this paper.

Keywords

doping profiles; fluctuations; ion implantation; molecular dynamics method; semiconductor junctions; semiconductor process modelling; sensitivity analysis; MDM simulator; characteristics variation; normalized standard deviation; precise efficient analytical method; realistic dopant fluctuations; sensitivity analysis; shallow junction formation; threshold voltage frequency distribution; within-die fluctuations; Analytical models; Fluctuations; Gaussian distribution; Histograms; Impurities; Ion implantation; MOS devices; Microelectronics; Sensitivity analysis; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306865

Filename

1306865