DocumentCode :
3086852
Title :
3D vertical TaOx/TiO2 RRAM with over 103 self-rectifying ratio and sub-μA operating current
Author :
Chung-Wei Hsu ; Chia-Chen Wan ; I-Ting Wang ; Mei-Chin Chen ; Chun-Li Lo ; Yao-Jen Lee ; Wen-Yueh Jang ; Chen-Hsi Lin ; Tuo-Hung Hou
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
9-11 Dec. 2013
Abstract :
The 3D double-layer vertical RRAM with ultralow sub-μA operating current and high self-rectifying ratio over 103 has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.
Keywords :
random-access storage; rectifying circuits; tantalum; tantalum compounds; titanium; titanium compounds; 3D double-layer vertical RRAM; Ta-TaOx-TiO2-Ti; data storage; high self-rectifying ratio; interfacial switching device; ultralow sub-μA operating current; Arrays; Electrodes; Resistance; Switches; Three-dimensional displays; Transistors; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
Type :
conf
DOI :
10.1109/IEDM.2013.6724601
Filename :
6724601
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3086852
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