• DocumentCode
    3086852
  • Title

    3D vertical TaOx/TiO2 RRAM with over 103 self-rectifying ratio and sub-μA operating current

  • Author

    Chung-Wei Hsu ; Chia-Chen Wan ; I-Ting Wang ; Mei-Chin Chen ; Chun-Li Lo ; Yao-Jen Lee ; Wen-Yueh Jang ; Chen-Hsi Lin ; Tuo-Hung Hou

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    The 3D double-layer vertical RRAM with ultralow sub-μA operating current and high self-rectifying ratio over 103 has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.
  • Keywords
    random-access storage; rectifying circuits; tantalum; tantalum compounds; titanium; titanium compounds; 3D double-layer vertical RRAM; Ta-TaOx-TiO2-Ti; data storage; high self-rectifying ratio; interfacial switching device; ultralow sub-μA operating current; Arrays; Electrodes; Resistance; Switches; Three-dimensional displays; Transistors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724601
  • Filename
    6724601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3086852