Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode

Author

Euijun Cha ; Jiyong Woo ; Daeseok Lee ; Sangheon Lee ; Jeonghwan Song ; Yunmo Koo ; Jihyun Lee ; Chan Gyung Park ; Moon Young Yang ; Kamiya, K. ; Shiraishi, Kotaro ; Magyari-Kope, B. ; Nishi, Yoshio ; Hyunsang Hwang

Author_Institution

Dept. of Mat. Sci. & Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea

fYear

2013

fDate

9-11 Dec. 2013

Abstract

The scaling and 3-D integration issues of NbO₂ with threshold switching characteristics were investigated for ReRAM selector device. To avoid the process problems of Pt electrode, we tested ReRAM and selector devices with conventional electrodes (TiN and W). By adopting 10nm-thick TiN bottom electrode with low thermal conductivity, we could significantly reduce the threshold current for insulator-metal transition (I-M-T) due to the heat confinement effect. We have evaluated for the first time both 1S1R (NbO₂/TaO_x) and hybrid (NbO₂/Nb₂O₅) devices. We have confirmed the feasibility of high density vertical memory device by adopting NbO₂ I-M-T selector device.

Keywords

electrodes; nanoelectronics; niobium compounds; platinum; random-access storage; tantalum compounds; titanium compounds; tungsten; 3D integration issues; NbO₂-Nb₂O₅; NbO₂-TaO_x; Pt; ReRAM selector device; TiN; W; heat confinement effect; high density vertical memory device; insulator-metal transition; nanoscale 3D vertical ReRAM; size 10 nm; thermal conductivity; threshold current; threshold selector; threshold switching characteristics; Arrays; Electrodes; Niobium; Switches; Three-dimensional displays; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724602

Filename

6724602