Title :
Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode
Author :
Euijun Cha ; Jiyong Woo ; Daeseok Lee ; Sangheon Lee ; Jeonghwan Song ; Yunmo Koo ; Jihyun Lee ; Chan Gyung Park ; Moon Young Yang ; Kamiya, K. ; Shiraishi, Kotaro ; Magyari-Kope, B. ; Nishi, Yoshio ; Hyunsang Hwang
Author_Institution :
Dept. of Mat. Sci. & Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
The scaling and 3-D integration issues of NbO2 with threshold switching characteristics were investigated for ReRAM selector device. To avoid the process problems of Pt electrode, we tested ReRAM and selector devices with conventional electrodes (TiN and W). By adopting 10nm-thick TiN bottom electrode with low thermal conductivity, we could significantly reduce the threshold current for insulator-metal transition (I-M-T) due to the heat confinement effect. We have evaluated for the first time both 1S1R (NbO2/TaOx) and hybrid (NbO2/Nb2O5) devices. We have confirmed the feasibility of high density vertical memory device by adopting NbO2 I-M-T selector device.
Keywords :
electrodes; nanoelectronics; niobium compounds; platinum; random-access storage; tantalum compounds; titanium compounds; tungsten; 3D integration issues; NbO2-Nb2O5; NbO2-TaOx; Pt; ReRAM selector device; TiN; W; heat confinement effect; high density vertical memory device; insulator-metal transition; nanoscale 3D vertical ReRAM; size 10 nm; thermal conductivity; threshold current; threshold selector; threshold switching characteristics; Arrays; Electrodes; Niobium; Switches; Three-dimensional displays; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724602
