Surface-potential-plus approach for next generation CMOS device modeling

Author

He, Jin ; Xi, Xuemei ; Wan, Hui ; Chan, Mansun ; Niknejad, Ali ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2004

fDate

15-16 March 2004

Firstpage

321

Lastpage

324

Abstract

This paper outlines the advanced Surface-Potential-Plus (SPP) approach for the next generation CMOS device modeling. The main object of this approach is to develop a continuous, completely symmetric and accurate advanced charge-based MOS transistor model from the basic device physics including various physics effects. A unified exact inversion charge relation valid for uniform and retrograde doping cases is first obtained. Various small dimensional effects are elucidated and integrated concisely into this model. Comparison with measured data is finally presented to validate the new model. Importantly, it was also extended to UTB and double-gate MOSFETs.

Keywords

MOSFET; Poisson equation; doping profiles; inversion layers; semiconductor device models; surface potential; C-V models; CMOS device modeling; I-V models; accurate transistor model; advanced charge-based MOS transistor model; band bending; basic device physics; channel charge distribution; completely symmetric model; double-gate MOSFET; next generation device modeling; polysilicon depletion; quasi 2D Poisson equation; quasi-Fermi potential; retrograde doping; small dimensional effects; surface-potential-plus approach; unified exact inversion charge relation; uniform doping; Ballistic transport; CMOS technology; Helium; Integrated circuit modeling; MOSFETs; Physics; Poisson equations; Semiconductor device modeling; Semiconductor process modeling; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306870

Filename

1306870