BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector

Author

Daeseok Lee ; Jaesung Park ; Sangsu Park ; Jiyong Woo ; Kibong Moon ; Euijun Cha ; Sangheon Lee ; Jeonghwan Song ; Yunmo Koo ; Hyunsang Hwang

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea

fYear

2013

fDate

9-11 Dec. 2013

Abstract

TiO_x based Insulator-Metal-Transition (IMT) devices with TiN electrode were investigated for selector application. To maximize heat confinement, we adopted localized filament by breaking stoichiometric ALD TiO₂ layer. Using Ti₄O₇ target and reduction annealing with Ta electrode, IMT layer was formed. By optimizing device structure to maximize heat confinement and oxygen stoichiometry to obtain IMT Ti₃O₅ layer, we could maximize IMT characteristics at low threshold power. Scaling device area significantly improves the IMT characteristics. Moreover, reliable 1S1R characteristics were also confirmed.

Keywords

CMOS integrated circuits; annealing; electrodes; nanoelectronics; stoichiometry; tantalum; titanium compounds; BEOL compatible 3D nanoscale IMT selector; CMOS compatible material; TiN-TiO_x-Ta-TiN; device structure; electrode; heat confinement; insulator-metal-transition devices; localized filament; low threshold power; oxygen stoichiometry; reliable 1S1R characteristics; scaling device area; stoichiometric ALD layer; target-reduction annealing; temperature 300 degC; Arrays; Heating; Materials; Temperature; Thermal stability; Three-dimensional displays; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724604

Filename

6724604