Title :
BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector
Author :
Daeseok Lee ; Jaesung Park ; Sangsu Park ; Jiyong Woo ; Kibong Moon ; Euijun Cha ; Sangheon Lee ; Jeonghwan Song ; Yunmo Koo ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
TiOx based Insulator-Metal-Transition (IMT) devices with TiN electrode were investigated for selector application. To maximize heat confinement, we adopted localized filament by breaking stoichiometric ALD TiO2 layer. Using Ti4O7 target and reduction annealing with Ta electrode, IMT layer was formed. By optimizing device structure to maximize heat confinement and oxygen stoichiometry to obtain IMT Ti3O5 layer, we could maximize IMT characteristics at low threshold power. Scaling device area significantly improves the IMT characteristics. Moreover, reliable 1S1R characteristics were also confirmed.
Keywords :
CMOS integrated circuits; annealing; electrodes; nanoelectronics; stoichiometry; tantalum; titanium compounds; BEOL compatible 3D nanoscale IMT selector; CMOS compatible material; TiN-TiOx-Ta-TiN; device structure; electrode; heat confinement; insulator-metal-transition devices; localized filament; low threshold power; oxygen stoichiometry; reliable 1S1R characteristics; scaling device area; stoichiometric ALD layer; target-reduction annealing; temperature 300 degC; Arrays; Heating; Materials; Temperature; Thermal stability; Three-dimensional displays; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724604
