DocumentCode :
3086948
Title :
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Author :
Muller, Johannes ; Boscke, T.S. ; Muller, Sebastian ; Yurchuk, Ekaterina ; Polakowski, P. ; Paul, J. ; Martin, Daniel ; Schenk, T. ; Khullar, K. ; Kersch, A. ; Weinreich, W. ; Riedel, S. ; Seidel, K. ; Kumar, Ajit ; Arruda, T.M. ; Kalinin, S.V. ; Schlosse
Author_Institution :
Fraunhofer IPMS-CNT, Dresden, Germany
fYear :
2013
fDate :
9-11 Dec. 2013
Abstract :
With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.
Keywords :
CMOS digital integrated circuits; ferroelectric storage; field effect transistors; hafnium compounds; random-access storage; CMOS-environment; HfO2; MFIS-FET; MFM capacitors; NVM properties; ferroelectric memories; perovskite based FRAM; thin films; Capacitors; Ferroelectric films; Hafnium compounds; Logic gates; Nonvolatile memory; Random access memory; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
Type :
conf
DOI :
10.1109/IEDM.2013.6724605
Filename :
6724605
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3086948
بازگشت