• DocumentCode
    3086948
  • Title

    Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

  • Author

    Muller, Johannes ; Boscke, T.S. ; Muller, Sebastian ; Yurchuk, Ekaterina ; Polakowski, P. ; Paul, J. ; Martin, Daniel ; Schenk, T. ; Khullar, K. ; Kersch, A. ; Weinreich, W. ; Riedel, S. ; Seidel, K. ; Kumar, Ajit ; Arruda, T.M. ; Kalinin, S.V. ; Schlosse

  • Author_Institution
    Fraunhofer IPMS-CNT, Dresden, Germany
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.
  • Keywords
    CMOS digital integrated circuits; ferroelectric storage; field effect transistors; hafnium compounds; random-access storage; CMOS-environment; HfO2; MFIS-FET; MFM capacitors; NVM properties; ferroelectric memories; perovskite based FRAM; thin films; Capacitors; Ferroelectric films; Hafnium compounds; Logic gates; Nonvolatile memory; Random access memory; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724605
  • Filename
    6724605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3086948