Title :
Film profile engineering (FPE): A new concept for manufacturing of short-channel metal oxide TFTs
Author :
Rong-Jhe Lyu ; Horng-Chih Lin ; Ming-Hung Wu ; Bo-Shiuan Shie ; Hsiang-Ting Hung ; Tiao-Yuan Huang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A film profile engineering (FPE) concept which utilizes the unique features of various deposition tools to tailor and optimize the profile of the deposited films was demonstrated with the fabricated ZnO TFTs. By implementing the PR trimming technique, high performance devices with L <; 100 nm can be readily achieved.
Keywords :
II-VI semiconductors; thin film transistors; wide band gap semiconductors; zinc compounds; FPE; PR trimming; ZnO; ZnO TFT; deposited films; deposition tools; film profile engineering; short-channel metal oxide; Dielectrics; Fabrication; Films; Logic gates; Performance evaluation; Zinc oxide;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724607
