Mechanically flexible vertically integrated a-IGZO thin-film transistors with 500 nm channel length fabricated on free standing plastic foil

Author

Petti, L. ; Aguirre, P. ; Munzenrieder, N. ; Salvatore, G.A. ; Zysset, Christoph ; Frutiger, A. ; Buthe, L. ; Vogt, Christian ; Troster, G.

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We report the first mechanically flexible amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) vertical thin-film transistors (VTFTs) with 500 nm channel length, fabricated on a freestanding plastic foil, using a low temperature process <;150°C. The VTFTs exhibit a well-shaped transfer characteristic, with an on/off current ratio >10⁷ and a threshold voltage of 2.2 V. We demonstrate full device functionality down to 5 mm bending radius, even after 1000 bending cycles. These results proof that VTFTs are feasible for realizing compact and bendable electronic systems.

Keywords

II-VI semiconductors; gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; amorphous indium-gallium-zinc-oxide vertical thin-film transistors; bendable electronic systems; free standing plastic foil; mechanically flexible vertically integrated a-IGZO thin-film transistors; on/off current ratio; size 500 nm; threshold voltage; transfer characteristic; voltage 2.2 V; Logic gates; Plastics; Pollution measurement; Strain; Substrates; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724609

Filename

6724609