Local transfer of single-crystalline silicon (100) layer by meniscus force and its application to high-performance MOSFET fabrication on glass substrate

We propose a novel low-temperature layer transfer technique using meniscus force and midair cavity structure. Local transfer of thermally-oxidized SOI layer to glass was successfully carried out at 80 °C. N-channel MOSFET fabricated on glass using the SOI layer showed a very high field-effect mobility of 998 cm²V^-1 S^-1 and a low threshold voltage of 3.0 V. Single-crystalline silicon MOSFETs are successfully fabricated on glass under a maximum process temperature of 300 °C.