UTSOI2: A complete physical compact model for UTBB and independent double gate MOSFETs

Author

Poiroux, T. ; Rozeau, O. ; Martinie, S. ; Scheer, P. ; Puget, S. ; Jaud, M.A. ; El Ghouli, S. ; Barbe, J.C. ; Juge, A. ; Faynot, O.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2013

fDate

9-11 Dec. 2013

Abstract

In this paper, we present the first complete compact model dedicated to Ultra-Thin Body and Box and Independent Double Gate MOSFETs based on an explicit formulation of front and back surface potentials that is valid and extremely accurate in all operation regimes. The model provides physics-based consistent description of DC and AC device characteristics; it has been extensively validated against TCAD and hardware data, and fulfills standard requirements from quality assurance and convergence tests for circuit design.

Keywords

MOSFET; quality assurance; semiconductor device models; semiconductor device testing; AC device characteristics; DC device characteristics; TCAD data; UTBB MOSFET; UTSOI2; circuit design; complete physical compact model; convergence tests; explicit formulation; front-back surface potentials; hardware data; independent double gate MOSFET; physic-based consistent description; quality assurance; ultrathin body-box MOSFET; Backplanes; Electric potential; Logic gates; MOSFET; Predictive models; Semiconductor device modeling; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724616

Filename

6724616