DocumentCode :
3087261
Title :
Exploring the design space of non-planar channels: Shape, orientation, and strain
Author :
Stanojevic, Zlatan ; Karner, M. ; Kosina, Hans
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2013
fDate :
9-11 Dec. 2013
Abstract :
We conduct a comprehensive simulation study of non-planar n-type channels based on consistent, physical models containing measurable quantities rather than fit-parameters. This contrasts empirical thin-body models used in classical/quantum-corrected TCAD. The method involves the self-consistent solution of the two-dimensional Schrödinger-Poisson system, combined with linearized Boltzmann transport in the third dimension. We advance the art of simulation by (i) introducing quantum simulation on unstructured meshes for arbitrary geometries, (ii) providing an efficient framework for rapid evaluation of device designs, and (iii) contributing a surface roughness scattering model for arbitrarily shaped surfaces. Consistent modeling allows us to make reliable assertions with respect to device performance.
Keywords :
MOSFET; Schrodinger equation; semiconductor device models; surface roughness; arbitrary geometries; classical TCAD; linearized Boltzmann transport; nonplanar n type channels; quantum corrected TCAD; self consistent solution; surface roughness scattering model; thin body models; two dimensional Schrodinger Poisson system; unstructured meshes; Data models; Rough surfaces; Scattering; Shape; Silicon; Strain; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
Type :
conf
DOI :
10.1109/IEDM.2013.6724618
Filename :
6724618
Link To Document :
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