Title :
A SiC hybrid operational amplifier for 350°C operation
Author :
Tomana, M. ; Johnson, R.W. ; Jaeger, R.C. ; Palmour, John
Author_Institution :
Dept of Electr. Eng., Auburn Univ., AL, USA
Abstract :
A basic operational amplifier has been fabricated and tested using n-channel SiC MESFETs. An open-loop gain exceeding 63 dB has been achieved over the temperature range of 25-365°C with a unity gain-bandwidth of between 175 and 250 kHz
Keywords :
Schottky gate field effect transistors; hybrid integrated circuits; operational amplifiers; semiconductor materials; silicon compounds; 175 to 250 kHz; 25 to 365 degC; 350 degC; hybrid operational amplifier; n-channel MESFETs; open-loop gain; unity gain-bandwidth; Differential amplifiers; Etching; MESFETs; Ohmic contacts; Operational amplifiers; Silicon carbide; Temperature; Thick films; Transconductance; Voltage;
Conference_Titel :
Electronic Components and Technology Conference, 1992. Proceedings., 42nd
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0167-6
DOI :
10.1109/ECTC.1992.204200
