DocumentCode :
3087677
Title :
A time-dependent clustering model for non-uniform dielectric breakdown
Author :
Wu, E. ; Li, Bing ; Stathis, James H. ; Achanta, Ravi ; Filippi, R. ; McLaughlin, Paul
Author_Institution :
IBM Semicond. R&D Center, Essex Junction, VT, USA
fYear :
2013
fDate :
9-11 Dec. 2013
Abstract :
We report a time-dependent clustering model for non-uniform dielectric breakdown. While at high percentiles non-Possion area scaling dominates, the model restores the weakest-link characteristics at low percentiles relevant for reliability projection. Its validity is demonstrated by area scaling and excellent agreement with multiple experimental data sets. We show the clustering model can replace Weibull model with largely improved reliability margins.
Keywords :
Weibull distribution; electric breakdown; integrated circuit modelling; integrated circuit reliability; stochastic processes; Weibull model; nonPossion area scaling; nonuniform dielectric breakdown; reliability margins; reliability projection; time-dependent clustering model; Data models; Dielectric breakdown; Dielectrics; Mathematical model; Reliability; Semiconductor device modeling; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
Type :
conf
DOI :
10.1109/IEDM.2013.6724635
Filename :
6724635
Link To Document :
بازگشت