A time-dependent clustering model for non-uniform dielectric breakdown

Author

Wu, E. ; Li, Bing ; Stathis, James H. ; Achanta, Ravi ; Filippi, R. ; McLaughlin, Paul

Author_Institution

IBM Semicond. R&D Center, Essex Junction, VT, USA

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We report a time-dependent clustering model for non-uniform dielectric breakdown. While at high percentiles non-Possion area scaling dominates, the model restores the weakest-link characteristics at low percentiles relevant for reliability projection. Its validity is demonstrated by area scaling and excellent agreement with multiple experimental data sets. We show the clustering model can replace Weibull model with largely improved reliability margins.

Keywords

Weibull distribution; electric breakdown; integrated circuit modelling; integrated circuit reliability; stochastic processes; Weibull model; nonPossion area scaling; nonuniform dielectric breakdown; reliability margins; reliability projection; time-dependent clustering model; Data models; Dielectric breakdown; Dielectrics; Mathematical model; Reliability; Semiconductor device modeling; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724635

Filename

6724635

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3087677