Title :
InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)
Author :
Chang, S.W. ; Li, Xin ; Oxland, Richard ; Wang, S.W. ; Wang, C.H. ; Contreras-Guerrero, R. ; Bhuwalka, Krishna K. ; Doornbos, G. ; Vasen, T. ; Holland, M.C. ; Vellianitis, G. ; van Dal, M.J.H. ; Duriez, Blandine ; Edirisooriya, M. ; Rojas-Ramirez, J.S. ;
Author_Institution :
TSMC, Leuven, Belgium
Abstract :
Record setting III-V MOSFETs are reported. For the first time performance better than state-of-the-art HEMTs is demonstrated. For a MOSFET with 10 nm unstrained InAs surface channel and Lg = 130 nm operating at 0.5 V, on-current as high as Ion = 601 μA/μm (at fixed Ioff = 100 nA/μm) is achieved. This record performance is enabled by gm, ext = 2.72 mS/μm and S = 85 mV/dec, DIBL = 40 mV/V, resulting from breakthroughs in epitaxy and III-V/dielectric interface engineering. Measured mobility is 7100 cm2/V.s at ns = 6.7×1012 cm-2. Device simulations further elucidate the performance potential of III-V N-MOSFETs.
Keywords :
III-V semiconductors; MOSFET; high electron mobility transistors; indium compounds; semiconductor device testing; HEMT; III-V-dielectric interface engineering; InAs; N-MOSFET; size 10 nm; surface channel MOSFET; voltage 0.5 V; Benchmark testing; Electrical resistance measurement; Junctions; Logic gates; MOSFET circuits; Performance evaluation; Resistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724639