Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

This paper reports tri-gate sub-100 nm In_0.53Ga_0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of g_{m, max} > 1.5 mS/μm, at V_DS = 0.5 V. This result is the best balance of g_{m, max} and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ₀ = 760 cm²/V-s and peak v_x0 = 1.6×10⁷ cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.