DocumentCode
3087877
Title
Gan-on-diamond wafers: Recent developments
Author
Ejeckam, Felix ; Francis, Daniel ; Faili, Firooz ; Lowe, Frank ; Twitchen, Daniel ; Bolliger, Bruce
Author_Institution
Element Six Technol., US Corp., Santa Clara, CA, USA
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
3
Abstract
In this work, we discuss the state-of-the-art of GaN-on-diamond wafer technology at Element Six. We report our recent demonstration of 100mm (4") GaN-on-diamond HEMT epitaxial wafers-with the highest thermal conductivity of diamond (>1500 W/mK) yet. The wafers exhibit <;20μm bow mounted on-carrier, sheet resistivity of <;450 Ohms/sq, and CV specs that are in-line with industry expectations.
Keywords
III-V semiconductors; diamond; gallium compounds; thermal conductivity; wafer level packaging; wide band gap semiconductors; GaN-on-diamond wafer technology; HEMT epitaxial wafers; thermal conductivity; Diamonds; HEMTs; Mechanical variables measurement; Radio frequency; Satellites; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153472
Filename
7153472
Link To Document