Schottky-barrier modulated HfO2-resistive switching memory with ultra-low power

Author

Jian Xiaochuan ; Zhang Kailiang ; Wang Fang ; Han Yemei ; Zhao Jinshi ; Wang Baolin ; Sun Kuo ; Zhang Hongzhi

Author_Institution

Tianjin Key Lab. of Film Electron. & Commun. Devices, Tianjin Univ. of Technol., Tianjin, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

To reduce the Reset current, the HfO₂-based RRAM device with Ni top electrode (TE) and TiN bottom electrode (BE) is fabricated. Compared to the devices with Al and Ti top electrodes, the Ni/HfO₂/TiN device cell with the high-work-function Ni TE exhibits the ultra-low Reset current (sub-100nA), bipolar resistive switching, consistent switching with a large window and good data retention. In addition, multilevel storage characteristics are demonstrated by setting different compliance currents during set processes. The ultra-low power characteristic is related to the Schottky barrier at the interface of high-work-function Ni TE and n-type HfO₂. The mechanisms of resistive switching and current conduction are also analyzed based on the Schottky-barrier modulation.

Keywords

Schottky barriers; circuit switching; electrodes; hafnium compounds; low-power electronics; modulation; nickel; resistive RAM; titanium compounds; HfO₂; Ni; RRAM device; Schottky-barrier modulation; TiN; bipolar resistive switching; compliance current; consistent switching; current conduction; data retention; hafnium oxide-resistive switching memory; high-work-function; multilevel storage characteristic; nickel top electrode; resistive random access memory; titanium nitride bottom electrode; ultralow power characteristic; ultralow reset current; Area measurement; Modulation; Nickel; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153473

Filename

7153473