DocumentCode
3087929
Title
Impact of layout at advanced technology nodes on the performance and variation of digital and analog figures of merit
Author
Saxena, Shanky ; Dolainsky, Christoph ; Lunenborg, Meindert ; Jianjun Cheng ; Yu, Bei ; Vallishayee, Rakesh ; Ciplickas, Dennis
Author_Institution
PDF Solutions, Richardson, TX, USA
fYear
2013
fDate
9-11 Dec. 2013
Abstract
New technologies and integration schemes introduced over the last few generations have increased the sensitivity of transistor performance and variation to its layout and environment. This paper describes an infrastructure for efficient statistical characterization of the transistor variation. The impact of the increased sensitivity of transistor characteristics to its layout and environment is illustrated through a variety of figures of merit for digital, analog and RF design. Examples of layout parameters and their interaction that cause a large variation in these figures of merit illustrate the applications of this infrastructure.
Keywords
integrated circuit layout; RF design; analog figures of merit; digital figures of merit; statistical characterization; transistor performance; Layout; Logic gates; MOS devices; Radio frequency; Sensitivity; Standards; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724646
Filename
6724646
Link To Document