Title :
Power-efficient ultrahigh-speed CMOS wireless communications in terahertz era
Author :
Fujishima, Minoru
Author_Institution :
Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
This paper reports an ultrahigh-speed yet power-efficient CMOS transceiver with a carrier frequency of over 100 GHz. The FP (frequency-power) plot is proposed to choose an appropriate set of bias voltages for achieving low-power operation at a high operation frequency. Finally, 11-Gb/s wireless data transfer over a distance of 3 m with a CMOS 135-GHz transceiver is successfully demonstrated based on this design.
Keywords :
CMOS integrated circuits; field effect MIMIC; low-power electronics; radio transceivers; radiocommunication; FP plot; bit rate 11 Gbit/s; distance 3 m; frequency 135 GHz; frequency-power plot; low-power operation; power-efficient CMOS transceiver; power-efficient ultrahigh-speed CMOS wireless communications; wireless data transfer; Amplitude shift keying; CMOS integrated circuits; Logic gates; Power demand; Solid state circuits; Transceivers; Wireless communication;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724650
