DocumentCode :
3088062
Title :
Acoustically-engineered multi-port AlN-on-silicon resonators for accurate temperature sensing
Author :
Tabrizian, Roozbeh ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2013
fDate :
9-11 Dec. 2013
Abstract :
This paper reports on a novel silicon microresonator that is acoustically engineered to facilitate simultaneous yet independent piezoelectric transduction of multiple resonance modes with large difference in their temperature coefficient of frequency (TCF) and integer frequency ratios. A three-port aluminum-nitride-on-silicon (AlN-on-Si) microresonator prototype implemented based on this technique has two energy-trapped modes at 109 MHz and 218 MHz, with a TCF difference of ~7 ppm/°C, which are separately transduced through two isolated electrical ports. A small beat frequency extracted from an integer combination of these modes has a linear TCF of ~8300 ppm/°C, suitable for sensing the resonator temperature with high accuracy and resolution.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; microcavities; micromechanical resonators; silicon; temperature sensors; wide band gap semiconductors; AlN-Si; acoustically-engineered multiport AlN-on-silicon resonators; beat frequency; energy-trapped modes; frequency 109 MHz; frequency 218 MHz; integer frequency ratios; isolated electrical ports; piezoelectric transduction; resonance modes; resonator temperature; temperature coefficient of frequency; temperature sensing; three-port aluminum-nitride-on-silicon microresonator prototype; Acoustics; Resonant frequency; Sensitivity; Temperature; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
Type :
conf
DOI :
10.1109/IEDM.2013.6724651
Filename :
6724651
Link To Document :
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