High-performance flexible nanoelectronics: 2D atomic channel materials for low-power digital and high-frequency analog devices

In this work, we report the state-of-the-art flexible devices based on graphene for radio-frequency transistors and large bandgap MoS₂ for low-power digital transistors for flexible nanoelectronics. Our studies on graphene transistors feature record mobility, transit frequency, and tensile strain and the first demonstration of flexible capping layers. Our studies on MoS₂ transistors yield the first comprehensive insights into the coupled electrical and mechanical properties including buckling which degrades the gate control, and the thickness dependence of electrical properties.