Title :
Graphene/fluoropolymer hybrid materials with enhancement of all device properties for improved field-effect transistors
Author :
Tae-Jun Ha ; Jongho Lee ; Li Tao ; Kholmanov, Iskandar ; Ruoff, Rodney S. ; Rossky, Peter J. ; Akinwande, Deji ; Dodabalapur, Ananth
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
We report on the substantial improvement of the electronic characteristics of field-effect transistors (FETs) based on chemical vapor deposition (CVD) graphene, reduced graphene oxide (RGO), and molybdenum disulfide (MoS2) by an interacting capping layer of appropriate amorphous or polycrystalline fluoropolymers. All the key 2-dimensional device properties are improved including mobilities, on-off current ratio, electron-hole transport symmetry, Dirac voltage, and reduced residual carrier density.
Keywords :
amorphous semiconductors; carrier density; chemical vapour deposition; field effect transistors; graphene; molybdenum compounds; 2 dimensional device property; CVD graphene; Dirac voltage; FET; MoS2; RGO; amorphous fluoropolymers; capping layer; chemical vapor deposition; electron hole transport symmetry; electronic characteristics; field effect transistors; graphene/fluoropolymer hybrid materials; molybdenum disulfide; on-off current ratio; polycrystalline fluoropolymers; reduced graphene oxide; reduced residual carrier density; Field effect transistors; Graphene; Logic gates; MONOS devices; Materials; Scattering; Temperature;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724659
