Title :
Monolithic three-dimensional integration of carbon nanotube FET complementary logic circuits
Author :
Hai Wei ; Shulaker, Max ; Wong, H.-S Philip ; Mitra, Subhasish
Author_Institution :
Stanford Univ., Stanford, CA, USA
Abstract :
In this paper, we experimentally demonstrate, for the first time, a scalable integration process for monolithic three-dimensional ICs (3D ICs) using carbon nanotube field-effect transistors (CNFETs). We demonstrate the flexibility of our approach using CNFETs with high ION/IOFF that can be placed on arbitrary layers of monolithic 3D ICs, and connected using conventional vias to build fully-complementary monolithic 3D logic gates and monolithic 3D multi-stage logic circuits. We also demonstrate that such monolithic 3D logic gates can operate correctly over a range of supply voltages from 3V to 0.2V.
Keywords :
carbon nanotube field effect transistors; logic circuits; logic gates; three-dimensional integrated circuits; 3D IC; 3D multistage logic circuits; carbon nanotube FET complementary logic circuits; carbon nanotube field effect transistors; conventional vias; monolithic 3D logic gates; monolithic three dimensional integration; scalable integration process; voltage 3 V to 0.2 V; CNTFETs; Carbon nanotubes; Electrodes; Integrated circuits; Logic gates; Metals; Three-dimensional displays;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724663